搜索结果: 1-13 共查到“光学工程 photodetector”相关记录13条 . 查询时间(0.046 秒)
Tiny Black Holes Enable a New Type of Photodetector for High-Speed Data
Tiny Black Holes Enable New Type Photodetector High-Speed Data
2017/4/27
Tiny “black holes” on a silicon wafer make for a new type of photodetector that could move more data at lower cost around the world or across a data center. The technology, developed by electrical eng...
Fully On-Chip Integrated Photodetector Front-End Dedicated to Real-Time Portable Optical Brain Imaging
Biochip Analog CMOS Integrated Circuit Trans-Impedance Amplifier fNIRS Brain Imaging Medical Imaging Optical Sensors
2013/1/30
Optical brain imaging using functional near infra-red spectroscopy (fNIRS) offers a portable and noninvasive tool for monitoring of blood oxygenation. In this paper we have introduced a new miniaturiz...
High Speed Energy-Efficient Germanium Electro- absorption Modulator Featuring Monolithic Integration with Germanium p-i-n Photodetector
Optical devices Modulators
2015/5/26
We report a novel evanescent-coupled germanium electro-absorption modulator with a small active area of 16 μm 2 OCIS codes: (230.0230) Optical devices; (230.4110) Modulators giving an extinction ratio...
A Novel Optoelectronic Device Complimentary to Photodetector
Novel Optoelectronic Device Photodetector
2015/5/15
We experimentally demonstrate the first complimentary device to photodetector–output current decreases upon shining light. The device enables receiver-less optical interconnect scheme in conjunction w...
High-Performance 850 nm VCSEL and Photodetector Arrays for 25 Gb/s Parallel Optical Interconnects
Fiber optics components
2015/6/9
We design, fabricate and demonstrate 850 nm VCSEL and PD arrays which operate at 25 Gb/s per channel, up to 600 Gb/s with 24 channels, for low-power parallel optical module applications. We also repor...
Waveguide-Integrated Ge/Si Avalanche Photodetector with 105GHz Gain-Bandwidth Product
Avalanche photodiodes
2015/6/4
We report the first demonstration of a waveguide-integrated avalanche photodetector using Group-IV heterostructure materials. Such device achieved a responsivity of ~0.8A/W at unity gain and an impres...
Researchers at IBM have made the first photodetector from graphene – a sheet of carbon just one atom thick. The device, which can accurately detect optical data streams at speeds of 10 Gbit/s, could b...
A study on temperature characteristics of green silicon photodetector
green silicon photodetector temperature characteristics dark current generation-recombination current traps tunneling current
2011/5/9
Green silicon photodetector is successfully developed on the substrate of n-type single-
-crystal (100) silicon. To improve its performance, the detector is optimized by optimizing
the p-n junction ...
Novel 107 Gb/s Bias-Feeding Photodetector OEIC for Efficient Low-Cost Photoreceiver Co-Packaging
Bias-Feeding Photodetector OEIC Efficient Low-Cost Photoreceiver
2015/7/20
A novel bias-feeding photodetector is presented, suitable for dc-coupling with post-amplifiers or DEMUX-ICs, thus greatly reducing the RF coupling losses into subsequent electronics. The receiver modu...
Investigations of photoresponse signals of LT-GaAs photodetector
electro-optic sampling ultrafast photodetectors
2011/5/6
In this paper, we demonstrate our electro-optic sampling system constructed for characterization of high-speed photodetectors based on low-temperature-grown GaAs (LT-GaAs). Changes in the shape of ele...
Hybrid Flip-Chip Integration of a 40 Gb/s DPSK Receiver Comprising a Balanced Photodetector on a DLI-SOI Board
Hybrid Flip-Chip Integration DPSK Receiver Comprising Balanced Photodetector DLI-SOI Board
2015/8/4
A DPSK receiver concept using flipchip hybrid integration of InP photodetectors on SOI boards with optical decoder is presented. Horizontal waveguiding enables low-cost production for high data rates.
The photodetector of Ge nanocrystals/Si for 1.55 um operation deposited by pulsed laser deposition
2007/7/28
期刊信息
篇名
The photodetector of Ge nanocrystals/Si for 1.55 um operation deposited by pulsed laser deposition
语种
日文
撰写或编译
撰写
作者
Xiying Ma,Baohe Yuan,Zhijun Yan
第一作者单位
绍兴文理学院
刊物名称
Optics Communications
页面...
Study on high signal-to-noise ratio (SNR) silicon p-n junction photodetector
silicon p-n junction photodetector
2011/5/3
On the basis of n-type single-crystal (100) silicon substrate, a silicon p-n junction photodetector has been successfully developed. Three methods to improve photoresponse signal-to-noise ratio (SNR) ...