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Effect of annealing temperature on the morphology of ohmic contact Ti/Al/Ni/Au to n-AlGaN/GaN heterostructures
ohmic contacts heterostructure AlGaN/GaN heterostructure
2011/5/10
Ohmic contacts to AlGaN/GaN heterostructures which have low contact resistance and good surface morphology are required for the development of high temperature, high power and high frequency electron...
Investigation on microstructure evolution of oxidized Ni/Au ohmic contacts to p-GaN by XRD
microstructure evolution Ni/Au p-GaN XRD
2010/7/15
The microstructure evolution of oxidized Ni (20nm)/Au (20nm) contact to p-GaN with increasing annealing temperature was studied by synchrotron x-ray diffraction (XRD) and powder XRD. With the increase...