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We review our recent work towards quantum communication in a solid-state environment with qubits carried by electron spins. We propose three schemes to produce spin-entangled electrons, where the requ...
Interface Roughness-Induced Intrassubband Scattering in a Quantum Well Under an Electric Field
interface roughness intersubband
2010/4/13
The scattering rates in the lowest subband in a quantum well are calculated for interface roughness scattering when an electric field is applied perpendicular to the layer plane. It is found that the ...
The Orbit Center Dependence of the Energy levels in a Multiple Quantum Wells Under External Tilted Magnetic and Electric Fields
Energy levels Electric Fields Multiple Quantum Wells
2010/4/16
An analytical solution to the Schrödinger equation for a multiple quantum well system subjected to an externally applied electric field the growth direction and an externally applied tilted magne...
Electron Transport in GaAs Quantum Wells: Effect of Interface Roughness Scatterin
interface roughness electron transport
2010/4/16
The importance of interface roughness (IFR) scattering of electrons and LO-phonons for electron transport in semiconductor quantum wells is discussed. Modulation doping of quantum wells minimizes the ...