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Phase Transition Induced Vertical Alignment of Ultrathin Gallium Phosphide Nanowire Arrays on Silicon by Chemical Beam Epitaxy
Vertical Alignment Ultrathin Gallium Phosphide Nanowire Arrays Silicon Chemical Beam Epitaxy
2016/12/2
CBE and CVD were performed in an ultra-high vacuum (UHV) system. The background pressure was kept at 1 × 10-10 mbar. The Au was deposited by MBE on a hydrogen terminated Si substrate with a surface te...
Phase transition induced vertical alignment of ultrathin gallium phosphide nanowire arrays on silicon by chemical beam epitaxy
Biochemical engineering Green chemistry Sustainable chemistry Universities of Applied Sciences
2016/12/2
We demonstrate high-density heteroepitaxial growth of sub-10 nm diameter gallium phosphide (GaP) nanowire (NW) arrays on silicon (Si), using chemical beam epitaxy (CBE). The vertical alignment of GaP ...
Solid phase epitaxy amorphous silicon re-growth: some insight from empirical molecular dynamics simulation
Nucleation and growth Theory and models of film growth
2011/9/1
The modelling of interface migration and the associated diffusion mechanisms at the nanoscale level is a challenging issue. For many technological applications ranging from nanoelectronic devices to s...
The activation energy of the nitrogen acceptor in p-type ZnO film grown by plasma-assisted molecular beam epitaxy
A. Semiconductors B. Impurities in semiconductors C. Optical properties D. Hall effect measurement
2011/12/13
The nitrogen-doped, p-type ZnO film was grown by plasma-assisted molecular beam epitaxy (P-MBE) on c-plane sapphire (c-Al2O3) using radical NO as oxygen and nitrogen sources. The activation energy of ...
期刊信息
篇名
Photoluminescence of ZnSe-ZnS SQWs Grown by Vapor Epitaxy
语种
英文
撰写或编译
作者
Y.M.Lu,D.Z.Shen,Y.C.Liu,J.Y.Zhang,X.W.Fan
第一作者单位
刊物名称
Chin. Phys. Lett
页面
19(1) (2002)131.
出版日期
2002年
月
日
文章标识(ISSN)
相关...
Optical Properties of ZnCdSe/ZnMgSe Multiple Quantum Wells Grwon by Molecular Beam Epitaxy
2007/7/28
期刊信息
篇名
Optical Properties of ZnCdSe/ZnMgSe Multiple Quantum Wells Grwon by Molecular Beam Epitaxy
语种
英文
撰写或编译
作者
Lu Youming,Shen Dezhen,Liu Yuchun
第一作者单位
刊物名称
Chin.Phys. Lett
页面
19(1) 1152(2002).
出版日...
Molecular dynamics simulation of the thermaldynamic effects versus Ge content x in Si1-xGex/Si（100）epitaxy growth
Molecular dynamics simulation epitaxy critical layer thickness Si1-xGex
2007/5/15
The Molecular Dynamics Simulation of epitaxial process of Si1-xGex/Si(100) was carried out by utilizing the Stillinger-Weber potential and Gear algorithm. The thermal dynamic effects due to different ...
The hole transport properties of nitrogen doped p-type ZnO grown on c-plane sapphire c-Al2O3 were investigated by temperature-dependent Hall-effect measurements. The experimental Hall mobility was f...
Surface Morphology Analysis of GaInAsSb Films Grown by Liquid Phase Epitaxy
Liquid phase epitaxy Surface structure Quaternary semiconductors
2010/9/29
We studied growth mechanisms in semiconducting Ga1¡xInxAsySb1¡y films grown by liquid phase epitaxy on (100) GaSb:Te (1017 cm¡3) substrates at 600 ° C solution-substrate temperature....
Magnetic field sensors based on undoped In0.53Ga0.47As/InP heterostructures fabricated by molecular beam epitaxy and metalorganic chemical vapor deposition
Hall sensors magnetoresistors InGaAs/InP heterostructures electronic transport geometric correction factor molecular beam epitaxy (MBE)
2011/4/27
In this paper we, describe the design and fabrication process of Hall and magnetoresistor cross-shaped sensors using In0.53Ga0.47As/InP layer structures as active media. The influence of geometric cor...
Properties and origin of oval defects in epitaxial structures grown by molecular beam epitaxy
oval defects A3B5 molecular beam epitaxy (MBE) spectrally resolved photoluminescence
2011/4/27
A class of macroscopic, so-called oval defects, which may be found in an epitaxial A3B5 materials grown by molecular beam epitaxy (MBE) technique, is studied in this paper. The investigations were per...
Photoreflectance spectroscopy of thick GaN layers grown by hydride vapour phase epitaxy technique
GaN photoreflectance photoluminescence electric field
2011/4/27
The room temperature photoreflectance (PR) spectroscopy was used to investigate thick GaN epitaxial layers. The GaN layers were grown by hydride vapour phase epitaxy (HVPE) technique and compared to t...
Deep centers in InGaAs/InP layers grown by molecular beam epitaxy
InGaAs deep centers deep level transient spectroscopy (DLTS)
2011/4/27
The deep level transient spectroscopy (DLTS) method was applied to study deep centers in lattice mismatched InGaAs/InP layers grown by molecular beam epitaxy. The composition and the strain state of t...
Thin films of ZnO and ZnMnO by atomic layer epitaxy
ZnO magnetism low temperature growth organic precursors
2011/4/27
We discuss properties of thin films of ZnO and ZnMnO grown with atomic layer epitaxy using new, organic zinc and manganese precursors. Several characterization techniques, including X-ray diffraction,...