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采用p-InGaN/p+-GaN接触层的Ni/Pd基p型欧姆接触（图）
p型欧姆接触 氮化物材料 p-InGaN p+-GaN Journal of Semiconductors GaN基激光器
2022/10/4
近日，中国科学院苏州纳米所刘建平课题组通过采用在薄层（20~30 nm）的p-InGaN/p+-GaN接触层上沉积Ni/Pd 金属，获得了低阻的p型欧姆接触。在工作中研究了表面预处理和退火温度对接触的影响，最佳退火温度为550 ℃，当温度高于该温度时，薄层电阻增大。与单一的Ni接触层相比，含Pd金属体系的比接触电阻率低约35%，采用p-InGaN/p+-GaN复合接触层结构的比接触电阻率比单一的p...
视频：大师论坛：Material Challenges for InGaN-based G
视频 大师论坛 Material Challenges for InGaN-based G
2014/11/28
视频：大师论坛：Material Challenges for InGaN-based G。
运用电致发光(EL)和光致发光(PL)实验，分析了图形化蓝宝石衬底(PSSLEDs)和常规平面蓝宝石衬底(C-LEDs)InGaN/GaN多量子阱发光二极管的光谱特性。对比EL谱，发现PSSLEDs拥有更强的光功率和更窄的半峰宽(FWHM)，说明PSSLEDs具有较高的晶体质量。其次，PSSLEDs的EL谱半峰宽随电流增加出现了更快的展宽，而这两种LED样品的PL谱半峰宽随激光功率增加呈现了基本相...
为了实现高显色指数和流明效率的白光发光二极管， 在（ ０ ０ ０ １） 蓝宝石衬底上利用金属有机化学气相沉积系统， 生长了双波长发射的Ｉ ｎ Ｇ ａ Ｎ ／ Ｇ ａ Ｎ多量子阱发光二极管结构．通过对不同Ｉｎ组分含量的双波长发射发光二极管结构的光致发光和电致发光性能进行分析， 结果表明Ｉ ｎ组分含量对双波长发射发光二极管的光致发光谱的稳定性及发光效率有重要影响．此外，用双蓝光发射的芯片来激发ＹＡＧ：...
Optical and electrical characterization of reverse bias luminescence in InGaN light emitting diodes
GaN LED electroluminescence reverse-bias leakage current hot carrier
2011/5/5
This study investigates the reliability physics of the reverse bias luminescence (RBL) of
InGaN/GaN light emitting diodes. Optical and electrical characterization techniques including
surface temper...
Characterization of InGaN structures grown by epitaxial lateral overgrowth over a-plane GaN template
luminescence InGaN/GaN
2011/5/3
We report on the luminescence characterization of InGaN/GaN multiple quantum well (MQW) structures with average 15% In content in the well layers, grown on polar and non-polar sapphire substrates util...
Photoluminescence spectroscopy for the evaluation of band potential roughness of InGaN active layers
photoluminescence InGaN quantum wells Monte Carlo simulation exciton hopping
2011/4/28
Photoluminescence spectroscopy in combination with Monte Carlo simulation of exciton hopping is demonstrated to be a valuable tool for quantitative analysis of the band potential profile in active lay...