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搜索结果: 1-13 共查到化学 silicon相关记录13条 . 查询时间(0.093 秒)
For more than four decades, silicon has been used as the material to fabricate integrated circuits which are now ubiquitously used in almost all electronic products. Today, the market demands electron...
近日,中国科学技术大学钱逸泰课题组发展了一种低温(200 oC)熔盐体系中还原四氯化硅制备硅纳米材料的方法,将该材料应用于锂离子电池负极材料,展示出了优异的电化学性能。该研究成果以“Preparation of NanocrystallinSi Starting from SiCl4 at 200...
Black silicon with multiscale texture was prepared by electrochemical etching. To confirm the benefits, we coated it with TiO2 and used it as the photoanode in water splitting, and observed 45% enhanc...
CBE and CVD were performed in an ultra-high vacuum (UHV) system. The background pressure was kept at 1 × 10-10 mbar. The Au was deposited by MBE on a hydrogen terminated Si substrate with a surface te...
We investigated carrier-relaxation dynamics of femtosecond laser annealed (FLA) polycrystalline silicon (poly-Si). The correlation between morphology and electrical properties of poly-Si after femtose...
Organic microporous materials based on silicon-containing spiroketal and spirothioketal polymers were synthesized via a 1,3-dioxol-forming polymerization reaction between 1,1a,4,4a,5,5a,8, 8a-octahydr...
Using ultraviolet (UV)-excited ozone gas, we prepared high-quality SiO2 films that can be used as gate dielectric films on poly-silicon or silicon wafers without sample heating. The UV-excited ozone g...
Crystalline n-type Si (100) wafers were implanted at room temperature with 160 keV He ions to a fluence of 5×1016cm-2 or 40 keV H ions to a fluence of 1×1016cm-2, singly or in combination, followed ...
Single-crystalline Si (100) samples were implanted with 30 keV He2+ ions to doses ranging from 2.0×1016 to 2.0×1017ions /cm2 and subsequently thermally annealed at 800℃ for 30min. The morphological ch...
摘要 Trimethylsilyl groups have been used in our research as a director as well as a bulky and lipophilic group in our quest for natural and non-natural molecules.
合成了一种头基为二茂铁基团的长链烯烃分子(Fc-CO-NH-(CH2)9-CH=CH2) (FcUA),并用红外、核磁、质谱等手段对其进行了表征。用微波引发将该化合物嫁接到平面硅的表面,并用X射线光电子能谱、反射红外光谱、原子力显微镜表征了这一过程。最后,通过循环伏安电化学法和电敏感原子力显微镜的导电模式对其进行电学性质测试。结果表明这层单分子膜可以提高硅片的介电常数。同时还观察到了一种不稳定的类...
期刊信息 篇名 Nitroxide-Mediated Radical Polymerization of 4-Vinylpyridine and Its Application on Modification of Silicon Substrate 语种 英文 撰写或编译 作者 Zhijun Chen,Jie Cai,Xiqun Jiang,Changzheng Yang 第一作者单位 刊物名称...
期刊信息 篇名 Silicon isotope compositions of dissolved silicon and suspended matter in the Yangtze River, China. 语种 英文 撰写或编译 撰写 作者 Ding T.,Wan D.,Wang C. and Zhang F. 第一作者单位 Institute of Mineral Resources,...

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