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Temperature Dependence of Galvanomagnetic Properties for Lightly Doped N-Type Si
Temperature Dependence Galvanomagnetic Properties Lightly Doped N-Type Si
2010/4/13
The temperature dependence of Hall and magnetoresistance effects in n-type Si having a resistivity of 1400 {W } cm at room temperature is studied in the temperature range of 210-320 K. The variation o...