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Barrier-Free Tunneling in a Carbon Heterojunction Transistor
Barrier-Free Tunneling Carbon Heterojunction Transistor
2010/11/23
Recently it has been experimentally shown that a graphene nanoribbon (GNR) can be obtained
by unzipping a carbon nanotube (CNT). This makes it possible to fabricate all-carbon
heterostructures that ...
Spin-Tunneling Time in Ferromagnetic/Semiconductor/Ferromagnetic Three-Terminal
Heterojunction in the Presence of Rashba Spin-Orbit Coupling
spin-tunneling time three-terminal heterojunction spin-orbit coupling
2007/8/15
2006Vol.46No.5pp.945-951DOI:
Spin-Tunneling Time in Ferromagnetic/Semiconductor/Ferromagnetic Three-Terminal
Heterojunction in the Presence of Rashba Spin-Orbit Coupling
ZHANG Yin...
期刊信息
篇名
Rashba spin-orbit effect on traversal time in ferromagnetic/semiconductor/ferromagnetic heterojunction
语种
英文
撰写或编译
撰写
作者
Han-Chun Wu,Yong Guo,Xin-Yi Chen,Bing-Lin Gu
第一作者单位
清华大学
刊物名称
Journal o...
Electrical Properties of CdS/Polyaniline Heterojunction
Polyaniline Cadmium sulphide Non-ohmic behaviour Heterojunction
2010/10/13
Conducting polyaniline (PANI) has been synthesized using Sol-gel technique with chemical oxidation process. Chemically prepared cadmium sulphide has been printed on pellet of conducting polyaniline us...
Eects of Post Deposition Treatments on Vacuum Evaporated CdTe Thin Films and CdS=CdTe Heterojunction Devices
Post Deposition Treatments Vacuum Evaporated CdTe Thin Films
2010/4/19
CdTe, CdS thin films and n-CdS/p-CdTe heterostructures have been prepared by conventional vacuum evaporation technique. Some post deposition treatments to optimize the device efficiency have been anal...